Parameters of Laser Diodes Radiation in Different Temperature Intervals

S Vlasova, A Vlasov

Abstract


The article deals with experimental studies that have been carried out in order to examine the radiation characteristics of commercially available semiconductor laser diodes and to analyze the reasons that cause changes in the characteristics of laser radiation. The need for such studies is connected with the search for expanding the possibilities of using semiconductor lasers in various appliances and devices operating in different conditions. The article presents experimental study results of the features of laser diodes emission spectra made on the basis of AlGaInP solid quadruple solution in the temperature range (50-300) K. The influence of temperature on the characteristics of the radiation spectrum was studied. The temperature was stabilized in a Cryomech ST15 closed-cycle vacuum helium cryostat. The radiation spectrum was investigated using a MDR-23 monochromator with a CCD detector installed.

It is shown that the spectral characteristics of the emission spectrum (the predominance of stimulated or induced radiation, the wavelength of the radiation) depend on the operating temperature of the laser diode. Information is obtained that in the temperature range (50-300) K certain processes take place in the semiconductor laser diode material that lead to a change in the width of the forbidden band by approximately (4.2-4.5) % of the value corresponding to a temperature of 50 K. Data is given that the the temperature coefficient value of the change in the forbidden band width varies in absolute magnitude in 2-3 times within the investigated temperature interval. The authors propose an experimental method for determining the ionization energies of exciton levels localized in the region of the p-n junction of a laser diode. This method can find practical application for quality control of material in the manufacture of semiconductor lasers. The advantage of the proposed method is that it provides information on the exciton spectrum of a laser diode material in the narrow zone of the p-n junction in which laser radiation is formed.

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References


Vlasova S.V., Petrov V.V., Shapochkin P. Y. The use of semiconductor laser diodes at low temperatures. Vestnik of MSTU, 2016, Vol. 19, No. 4, p.697-703.

Vlasov A.B. Studying the properties of laser diodes at cryogenic temperatures. Vestnik of MSTU, 2015, Vol. 18, No. 1, p.134-136.

Eliseev P.G. Introduction to the physics of diode lasers. - M .: Science, Home edition of Physical and Mathematical Literature, 1983.

Guliamov G. Sharibaev N.Y. The effect of temperature on the width of the forbidden band of the semiconductor. Physical Surface Engineering, 2011, Vol. 9, No. 1, p. 40-43.

Vainshtein I.A., Zatsepin A.F., Kortov V.S. On the applicability of the empirical Varshni relation for the temperature dependence of the width of the forbidden band. Physics of the solid, Vol. 41. (Vyp. 6), 1999, p. 994-998. Crossref

Zubkova S.M, Rusina L.N, Smelyanskaya E.V. The temperature dependence of the band structure of polytypes 3C, 2H, 4H, and 6H silicon carbide. Physics and technology of semiconductors, Vol. 37, No. 3, 2003, p. 257-265. Crossref

Smith R. Semiconductors. - Moscow: Mir, 1982. - 560 p.




DOI: http://dx.doi.org/10.21152/1750-9548.13.1.53

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