Electrothermal Simulation of Large-Area Semiconductor Devices


  • C Kirsch
  • S Altazin
  • R Hiestand
  • T Beierlein
  • R Ferrini
  • T Offermans
  • L Penninck
  • B Ruhstaller




The lateral charge transport in thin-film semiconductor devices is affected by the sheet resistance of the various layers. This may lead to a non-uniform current distribution across a large-area device resulting in inhomogeneous luminance, for example, as observed in organic light-emitting diodes (Neyts et al., 2006). The resistive loss in electrical energy is converted into thermal energy via Joule heating, which results in a temperature increase inside the device. On the other hand, the charge transport properties of the device materials are also temperature-dependent, such that we are facing a two-way coupled electrothermal problem. It has been demonstrated that adding thermal effects to an electrical model significantly changes the results (Slawinski et al., 2011). We present a mathematical model for the steady-state distribution of the electric potential and of the temperature across one electrode of a large-area semiconductor device, as well as numerical solutions obtained using the finite element method.


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How to Cite

Kirsch, C., Altazin, S., Hiestand, R., Beierlein, T., Ferrini, R., Offermans, T., Penninck, L. and Ruhstaller, B. (2017) “Electrothermal Simulation of Large-Area Semiconductor Devices”, The International Journal of Multiphysics, 11(2), pp. 127-136. doi: 10.21152/1750-9548.11.2.127.




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